N-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 9A. Housed in an 8-pin SOP package with gull-wing leads, it boasts a low drain-source on-resistance of 17mΩ at 10V. Operating across a wide temperature range from -55°C to 150°C, it is suitable for lead-frame SMT applications.
Rohm SH8K4 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 3.9 |
| Seated Plane Height (mm) | 1.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 9A |
| Maximum Drain Source Resistance | 17@10VmOhm |
| Typical Gate Charge @ Vgs | 15@5VnC |
| Typical Input Capacitance @ Vds | 1190@10VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Rohm SH8K4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.