N-channel enhancement mode power MOSFET featuring a dual dual drain configuration. This surface-mount component offers a maximum drain-source voltage of 30V and a continuous drain current of 9A. Housed in an 8-pin SOP package with gull-wing leads, it boasts a low drain-source on-resistance of 17mΩ at 10V. Operating across a wide temperature range from -55°C to 150°C, it is suitable for various electronic applications.
PackageSOP
MountingSurface Mount
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Technical Specifications
Rohm SH8K4TB technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOP
Package Description
Plastic Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
3.9
Seated Plane Height (mm)
1.75
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
9A
Material
Si
Maximum Drain Source Resistance
17@10VmOhm
Typical Gate Charge @ Vgs
15@5VnC
Typical Input Capacitance @ Vds
1190@10VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S5518
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Rohm SH8K4TB Datasheet
Download the complete datasheet for Rohm SH8K4TB to view detailed technical specifications.
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