Rohm SH8K4TB1 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 1.19nF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 17mR |
| RoHS | Compliant |
Download the complete datasheet for Rohm SH8K4TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
