The SH8M11TB1 is a surface mount N and P-Channel MOSFET from Rohm, featuring a maximum drain to source voltage of 30V and continuous drain current of 3.5A. It has an input capacitance of 85pF and a maximum power dissipation of 2W. The device is packaged in SOIC and is available on tape and reel.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Rohm SH8M11TB1 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 85pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 98mR |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SH8M11TB1 Datasheet
Download the complete datasheet for Rohm SH8M11TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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