The SH8M14TB1 is a dual-channel MOSFET from Rohm, featuring a package type of SOIC and a surface mount configuration. It has a maximum drain to source voltage of 30V and a continuous drain current of 7A. The device is capable of handling a maximum power dissipation of 2W. The input capacitance is 630pF, and the Rds on max is 21mR.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Rohm SH8M14TB1 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 630pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 21mR |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SH8M14TB1 Datasheet
Download the complete datasheet for Rohm SH8M14TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.