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Technical Specifications
Rohm SH8M2TB1 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 107mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | N and P-Channel |
| Input Capacitance | 140pF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 83mR |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SH8M2TB1 Datasheet
Download the complete datasheet for Rohm SH8M2TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.