Dual N-channel/P-channel enhancement mode power MOSFET in an 8-pin SOP package. Features a 30V drain-source voltage rating and continuous drain current of 5A for N-channel and 4.5A for P-channel. Offers low on-resistance of 51mOhm (N-channel) and 56mOhm (P-channel) at 10V gate-source voltage. Surface-mount design with gull-wing leads and a compact 5mm x 3.9mm plastic small outline package. Operates across a wide temperature range from -55°C to 150°C.
PackageSOP
MountingSurface Mount
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Technical Specifications
Rohm SH8M3 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOP |
| Package Description | Plastic Small Outline Package |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 3.9 |
| Seated Plane Height (mm) | 1.75 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5@N Channel|4.5@P ChannelA |
| Maximum Drain Source Resistance | 51@10V@N Channel|56@10V@P ChannelmOhm |
| Typical Gate Charge @ Vgs | 3.9@5V@N Channel|8.5@5V@P ChannelnC |
| Typical Input Capacitance @ Vds | 230@10V@N Channel|850@10V@P ChannelpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Rohm SH8M3 Datasheet
Download the complete datasheet for Rohm SH8M3 to view detailed technical specifications.
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