The SH8M70TB1 is a dual-channel MOSFET from Rohm with a maximum operating temperature of 150°C. It features a maximum power dissipation of 2W and a maximum continuous drain current of 2.5A. The device has a drain to source breakdown voltage of 250V and a drain to source resistance of 1.25R. It is available in a SOP package, suitable for surface mount applications. The SH8M70TB1 is a P-channel MOSFET with an input capacitance of 180pF and a maximum Rds on resistance of 1.63R.
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Rohm SH8M70TB1 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.25R |
| Drain to Source Voltage (Vdss) | 250V |
| FET Type | N and P-Channel |
| Input Capacitance | 180pF |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 1.63R |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SH8M70TB1 Datasheet
Download the complete datasheet for Rohm SH8M70TB1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.