N and P-Channel MOSFET transistor in SOP package, suitable for surface mount applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 7A. Offers a low drain-source on-resistance of 18mΩ at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes a turn-off delay time of 110ns and a fall time of 70ns.
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Rohm SP8M4FU6TB technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
18MR
Dual Supply Voltage
30V
Fall Time
70ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.19nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
2.5V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
2.5V
Turn-Off Delay Time
110ns
Compliance
RoHS
Compliant
Datasheet
Rohm SP8M4FU6TB Datasheet
Download the complete datasheet for Rohm SP8M4FU6TB to view detailed technical specifications.
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