N and P-Channel MOSFET transistor in SOP package, suitable for surface mount applications. Features a 30V drain-source breakdown voltage and a maximum continuous drain current of 7A. Offers a low drain-source on-resistance of 18mΩ at a nominal gate-source voltage of 2.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes a turn-off delay time of 110ns and a fall time of 70ns.
PackageSOP
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Rohm SP8M4FU6TB technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 18MR |
| Dual Supply Voltage | 30V |
| Fall Time | 70ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 2.5V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm SP8M4FU6TB Datasheet
Download the complete datasheet for Rohm SP8M4FU6TB to view detailed technical specifications.
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