Rohm
SP8M4TB
Power Field-Effect Transistor, 9A I(D), 30V, 0.025ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP8, 8 PIN
PackageSOP
Current Rating9A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Rohm SP8M4TB technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
7A
Current Rating
9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
18mR
Fall Time
70ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
110ns
Compliance
RoHS
Compliant
Datasheet
Rohm SP8M4TB Datasheet
Download the complete datasheet for Rohm SP8M4TB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.