The TT8J2TR MOSFET is a surface mount device with a maximum power dissipation of 1.25W and a drain to source breakdown voltage of 30V. It has a continuous drain current of 2.5A and a drain-source on resistance of 84mR. The device is RoHS compliant and lead free, packaged in a tape and reel format. Operating temperature range is not specified.
PackageSMD/SMT
MountingSurface Mount
Power1.25W
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Technical Specifications
Rohm TT8J2TR technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 84MR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 84mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm TT8J2TR Datasheet
Download the complete datasheet for Rohm TT8J2TR to view detailed technical specifications.
No datasheet is available for this part.