P-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 2.4A continuous drain current. This single dual drain transistor is housed in an 8-pin TSST lead-frame SMT package with a 0.65mm pin pitch, measuring 3.10mm(Max) x 1.70mm(Max) x 0.80mm(Max). Key specifications include a maximum drain-source on-resistance of 10.5 mOhm at 4.5V, typical gate charge of 6.7 nC at 4.5V, and typical input capacitance of 850pF at 10V. Maximum power dissipation is 1000mW, with an operating temperature range of -55°C to 150°C.
PackageTSST
MountingSurface Mount
Quick Jump:
Technical Specifications
Rohm TT8U1 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TSST |
| Package/Case | TSST |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.10(Max) |
| Package Width (mm) | 1.70(Max) |
| Package Height (mm) | 0.80(Max) |
| Seated Plane Height (mm) | 0.85(Max) |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±10V |
| Maximum Continuous Drain Current | 2.4A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 850@10VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S5518 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Rohm TT8U1 Datasheet
Download the complete datasheet for Rohm TT8U1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.