P-channel MOSFET transistor, dual configuration, enhancement mode, designed for small signal applications. Features a maximum drain-source voltage of 30V and a continuous drain current of 0.2A. Housed in a 6-pin UMT (SOT) lead-frame SMT package with gull-wing leads, measuring 2.1mm x 1.35mm x 0.9mm. Operates within a temperature range of -55°C to 150°C.
PackageUMT
MountingSurface Mount
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Technical Specifications
Rohm UM6J1N technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
UMT
Lead Shape
Gull-wing
Pin Count
6
PCB
6
Package Length (mm)
2.1(Max)
Package Width (mm)
1.35(Max)
Package Height (mm)
0.9(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Jedec
MO-223AB
Configuration
Dual
Category
Small Signal
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.2A
Maximum Drain Source Resistance
1400@10VmOhm
Typical Input Capacitance @ Vds
30@10VpF
Maximum Power Dissipation
150mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S5518
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Rohm UM6J1N Datasheet
Download the complete datasheet for Rohm UM6J1N to view detailed technical specifications.
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