N-Channel Silicon JFET, UMT6 package, 6-pin surface mount device. Features 30V Drain to Source Breakdown Voltage (Vdss) and 100mA Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 8 Ohms and a typical Gate to Source Voltage (Vgs) of 1.5V. Operates across a temperature range of -55°C to 150°C with 150mW power dissipation. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 35ns.
Current Rating100mA
MountingSurface Mount
PolarityN-CHANNEL
Power150mW
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Technical Specifications
Rohm UM6K1NTN technical specifications.
General
Continuous Drain Current (ID)
100mA
Current Rating
100mA
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
8R
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
13R
Dual Supply Voltage
30V
Fall Time
35ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
13pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150mW
Rds On Max
8R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
80ns
Turn-On Delay Time
15ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Rohm UM6K1NTN Datasheet
Download the complete datasheet for Rohm UM6K1NTN to view detailed technical specifications.
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