Dual NPN/PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a 50mA continuous collector current. This surface mount device, housed in an SC-88 (SOT-363) package, offers a minimum hFE of 30 and a transition frequency of 250MHz. Maximum power dissipation is 150mW, with an operating temperature range of -55°C to 150°C. The component is RoHS compliant.
Rohm UMD3NTR technical specifications.
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 100mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| RoHS | Compliant |
Download the complete datasheet for Rohm UMD3NTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.