NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a 150mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Packaged in a surface-mount UMT5, 5-pin configuration, this silicon transistor operates from -55°C to 150°C and is RoHS compliant.
Current Rating150mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Rohm UML2NTR technical specifications.
General
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Continuous Collector Current
150mA
Current Rating
150mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
180MHz
hFE Min
120
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
150mA
Max Power Dissipation
150mW
Mount
Surface Mount
Operating Supply Voltage
50V
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
50V
Compliance
RoHS
Compliant
Datasheet
Rohm UML2NTR Datasheet
Download the complete datasheet for Rohm UML2NTR to view detailed technical specifications.
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