NPN bipolar junction transistor (BJT) for small signal applications. Features a 50V collector-emitter breakdown voltage and a 150mA continuous collector current. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 180MHz. Packaged in a surface-mount UMT5, 5-pin configuration, this silicon transistor operates from -55°C to 150°C and is RoHS compliant.
Rohm UML2NTR technical specifications.
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Output Current | 150mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Operating Supply Voltage | 50V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for Rohm UML2NTR to view detailed technical specifications.
No datasheet is available for this part.