
Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity for versatile circuit design. This silicon transistor offers a continuous collector current of 150mA and a collector-emitter breakdown voltage of 50V. Key specifications include a maximum collector-emitter voltage of 400mV, a minimum hFE of 120, and a transition frequency of 140MHz. The compact UMT6/SC-88 package measures 2mm x 1.25mm x 0.7mm, operating from -55°C to 150°C.
Rohm UMZ2NTR technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | 150mA |
| Current Rating | 150mA |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 180MHz |
| Height | 0.7mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 150mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP, NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 140MHz |
| Width | 1.25mm |
| RoHS | Compliant |
Download the complete datasheet for Rohm UMZ2NTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
