Rohm
US5U35TR
Small Signal Field-Effect Transistor, 0.7A I(D), 45V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT5, 5 PIN
MountingSurface Mount
PolarityP-CHANNEL
Power700mW
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Technical Specifications
Rohm US5U35TR technical specifications.
General
Continuous Drain Current (ID)
700mA
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
45V
Drain-source On Resistance-Max
1.4R
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
120pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
700mW
Radiation Hardening
No
Rds On Max
800mR
RoHS Compliant
Yes
Turn-Off Delay Time
17ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Rohm US5U35TR Datasheet
Download the complete datasheet for Rohm US5U35TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.