The US5U35TR is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 700mW and a continuous drain current of 700mA. The device has a drain to source breakdown voltage of 45V and a drain to source resistance of 1.4R. It is packaged in a TUMT5, 5 PIN package and is lead free and RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Power700mW
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Technical Specifications
Rohm US5U35TR technical specifications.
General
| Continuous Drain Current (ID) | 700mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 45V |
| Drain-source On Resistance-Max | 1.4R |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm US5U35TR Datasheet
Download the complete datasheet for Rohm US5U35TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.