N-channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source resistance of 240mR and a nominal gate-to-source voltage of 1.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. Packaged for surface mounting in tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Rohm US5U3TR technical specifications.
General
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 80pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 240mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm US5U3TR Datasheet
Download the complete datasheet for Rohm US5U3TR to view detailed technical specifications.
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