N-channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source resistance of 240mR and a nominal gate-to-source voltage of 1.5V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. Packaged for surface mounting in tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power1W
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Technical Specifications
Rohm US5U3TR technical specifications.
General
Continuous Drain Current (ID)
1.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
6ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
80pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Nominal Vgs
1.5V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1W
Radiation Hardening
No
Rds On Max
240mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
15ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Rohm US5U3TR Datasheet
Download the complete datasheet for Rohm US5U3TR to view detailed technical specifications.
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