Samsung
CIG21L4R7MNE
Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 0.75A 0.26Ohm DCR 0805 T/R
Package0805
Current Rating750mA
MountingSurface Mount
Inductance4.7uH
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Technical Specifications
Samsung CIG21L4R7MNE technical specifications.
General
| Case Code (Imperial) | 0805 |
| Case Code (Metric) | 2012 |
| Package/Case | 0805 |
| Core Material | Ferrite |
| Current Rating | 750mA |
| DC Current | 750mA |
| DC Resistance (DCR) | 260mR |
| Depth | 1.35mm |
| Inductance | 4.7uH |
| Length | 0.079inch |
| Max Operating Temperature | 125°C |
| Military Standard | Not |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| RoHS Compliant | Yes |
| Series | CIG21L |
| Shielding | Shielded |
| Test Frequency | 1MHz |
| Tolerance | 20% |
| Width | 0.049inch |
Compliance
| RoHS | Compliant |
Datasheet
Samsung CIG21L4R7MNE Datasheet
Download the complete datasheet for Samsung CIG21L4R7MNE to view detailed technical specifications.
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