Inductance1uH
Quick Jump:
Technical Specifications
Samsung CIGT252008EH1R0MNE technical specifications.
General
| Type | Power |
| Technology | Thin Film |
| Core Material | Metal |
| Inductance | 1uH |
| Tolerance | 20% |
| Inductance Test Frequency | 1MHz |
| Maximum DC Current | 3.6A |
| Typical Temperature Rise | 40°C |
| Maximum Saturation Current | 4A |
| Inductance Decrease Percentage @ Isat | 30% |
| Max DC Resistance | 0.037Ohm |
| Case Size | 1008 |
| Product Length | 2.7mm |
| Height | 0.8mm |
| Product Depth | 2.2mm |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIGT252008EH1R0MNE Datasheet
Download the complete datasheet for Samsung CIGT252008EH1R0MNE to view detailed technical specifications.
No datasheet is available for this part.