Samsung
CIH03T1N2SNC
Inductor High Frequency Chip Multi-Layer 0.0012uH 0.3nH 100MHz 4Q-Factor Ceramic 0.25A 0.14Ohm DCR 0201 T/R
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Technical Specifications
Samsung CIH03T1N2SNC technical specifications.
General
Max Operating Temperature
125
Number of Terminals
2
Min Operating Temperature
-55
Number of Functions
1
Package Length
0.6
Tolerance
25
Package Width
0.3
Package Height
0.3
Terminal Placement
DUAL ENDED
Inductance-Nom (L)
0.0012
Inductor Type
GENERAL PURPOSE INDUCTOR
Shielded
NO
Inductor Application
RF INDUCTOR
DC Resistance
0.14
Rated Current-Max
0.25
Test Frequency
100
Self Resonance Frequency
10000
Quality Factor-Min (at L-nom)
4
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8504.50.80.00
REACH
Compliant
Military Spec
False
Datasheet
Samsung CIH03T1N2SNC Datasheet
Download the complete datasheet for Samsung CIH03T1N2SNC to view detailed technical specifications.
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