Samsung
CIH10T6N8JNE
Inductor High Frequency Chip Multi-Layer 0.0068uH 5% 100MHz 10Q-Factor Ceramic 0.7A 0.22Ohm DCR 0603 T/R
Inductance0.0068uH
Quick Jump:
Technical Specifications
Samsung CIH10T6N8JNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Core Material | Ceramic |
| Inductance | 0.0068uH |
| Tolerance | 5% |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.7A |
| Max DC Resistance | 0.22Ohm |
| Minimum Quality Factor | 10(Typ) |
| Minimum Self Resonant Frequency | 4000MHz |
| Case Size | 0603 |
| Product Length | 1.75mm |
| Height | 0.95mm |
| Product Depth | 0.95mm |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH10T6N8JNE Datasheet
Download the complete datasheet for Samsung CIH10T6N8JNE to view detailed technical specifications.
No datasheet is available for this part.