Samsung
CIH21T8N2JNE
Inductor High Frequency Chip Multi-Layer 0.0082uH 5% 100MHz 15Q-Factor 0.3A 0.28Ohm DCR 0805 T/R
Package0805
Inductance8.2nH
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Technical Specifications
Samsung CIH21T8N2JNE technical specifications.
General
| Package/Case | 0805 |
| Depth | 1.45mm |
| Height | 1.05mm |
| Inductance | 8.2nH |
| Max DC Current | 300mA |
| RoHS Compliant | Yes |
| Tolerance | 5% |
Compliance
| RoHS | Compliant |
Datasheet
Samsung CIH21T8N2JNE Datasheet
Download the complete datasheet for Samsung CIH21T8N2JNE to view detailed technical specifications.
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