Samsung
CIH21T8N2KNE
Inductor High Frequency Chip Multi-Layer 0.0082uH 10% 100MHz 15Q-Factor 0.3A 0.28Ohm DCR 0805 T/R
Inductance0.0082uH
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Technical Specifications
Samsung CIH21T8N2KNE technical specifications.
General
| Type | High Frequency Chip |
| Technology | Multi-Layer |
| Inductance | 0.0082uH |
| Tolerance | 10% |
| Inductance Test Frequency | 100MHz |
| Maximum DC Current | 0.3A |
| Max DC Resistance | 0.28Ohm |
| Minimum Quality Factor | 15 |
| Minimum Self Resonant Frequency | 2400MHz |
| Case Size | 0805 |
| Product Length | 2.3mm |
| Height | 1.05mm |
| Product Depth | 1.45mm |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Samsung CIH21T8N2KNE Datasheet
Download the complete datasheet for Samsung CIH21T8N2KNE to view detailed technical specifications.
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