Samsung
CIL10NR82KNC
Inductor RF Shielded Multi-Layer 0.82uH 10% 25MHz 15Q-Factor Ferrite 0.035A 2.1Ohm DCR 0603 T/R
Package0603
Inductance820nH
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Technical Specifications
Samsung CIL10NR82KNC technical specifications.
General
Package/Case
0603
Core Material
Ferrite
DC Current
35mA
DC Resistance (DCR)
2.1R
Depth
0.95mm
Height
0.95mm
Inductance
820nH
Length
1.75mm
Max DC Current
35mA
Max Operating Temperature
125°C
Military Standard
Not
Min Operating Temperature
-55°C
Packaging
Tape and Reel
Radiation Hardening
No
RoHS Compliant
Yes
Self Resonant Frequency
75MHz
Shielding
Shielded
Test Frequency
25MHz
Tolerance
10%
Compliance
RoHS
Compliant
Datasheet
Samsung CIL10NR82KNC Datasheet
Download the complete datasheet for Samsung CIL10NR82KNC to view detailed technical specifications.
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