Samsung
IRF634
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Technical Specifications
Samsung IRF634 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung IRF634 Datasheet
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