Samsung
IRF820
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
MountingThrough Hole
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Technical Specifications
Samsung IRF820 technical specifications.
General
| Continuous Drain Current (ID) | 2.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Samsung IRF820 Datasheet
Download the complete datasheet for Samsung IRF820 to view detailed technical specifications.
No datasheet is available for this part.
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