Samsung
IRFP352
Power Field-Effect Transistor, 13A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Technical Specifications
Samsung IRFP352 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung IRFP352 Datasheet
Download the complete datasheet for Samsung IRFP352 to view detailed technical specifications.
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