Samsung
IRFP452
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Technical Specifications
Samsung IRFP452 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
Pin Count
2
Number of Elements
1
Compliance
RoHS
No
REACH
unknown
Military Spec
False
Datasheet
Samsung IRFP452 Datasheet
Download the complete datasheet for Samsung IRFP452 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.