The Samsung K4E640812E-TP50 is an industrial-grade EDO DRAM IC with a maximum operating temperature of 85 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It features a 32-pin TSOP2 package and a 3.3V supply voltage. The IC has a maximum access time of 50ns and a memory capacity of 8388608 words, with 8000000 words of code. It is suitable for use in industrial applications where high reliability and performance are required.
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Technical Specifications
Samsung K4E640812E-TP50 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 32 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G32 |
| Width | 10.16 |
| Length | 20.95 |
| Pin Count | 32 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Voltage-Max (Vsup) | 3.6 |
| Supply Voltage-Min (Vsup) | 3 |
| Number of Words | 8388608 |
| Number of Words Code | 8000000 |
| Memory IC Type | EDO DRAM |
| Number of Ports | 1 |
| Access Time-Max | 50 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.02 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung K4E640812E-TP50 Datasheet
Download the complete datasheet for Samsung K4E640812E-TP50 to view detailed technical specifications.
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