Samsung
K4H280838E-TCB3
DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
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Technical Specifications
Samsung K4H280838E-TCB3 technical specifications.
General
| Max Operating Temperature | 70 |
| Number of Terminals | 66 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G66 |
| Width | 10.16 |
| Length | 22.22 |
| Pin Count | 66 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 2.5 |
| Supply Voltage-Max (Vsup) | 2.7 |
| Supply Voltage-Min (Vsup) | 2.3 |
| Supply Current-Max | 0.3 |
| Number of Words | 16777216 |
| Number of Words Code | 16000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.003 |
| Access Time-Max | 0.7 |
| Clock Frequency-Max (fCLK) | 166 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8542.32.00.02 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4H280838E-TCB3 Datasheet
Download the complete datasheet for Samsung K4H280838E-TCB3 to view detailed technical specifications.
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