Samsung
K4M283233H-FG75
Synchronous DRAM 4194304 Words 4000000 Words Code 133 MHz 0.13A 0.0005A BOTTOM Terminal
The K4M283233H-FG75 is a synchronous DRAM memory IC from Samsung with a maximum operating temperature of 85 degrees Celsius and a minimum operating temperature of -25 degrees Celsius. It features a JEDEC package code of R-PBGA-B90 and a temperature grade of OTHER. The device has a maximum supply current of 0.13A and a maximum standby current of 0.0005A. It operates at a maximum clock frequency of 133 MHz and has an access time of 7.5 ns.
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Technical Specifications
Samsung K4M283233H-FG75 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 90 |
| Min Operating Temperature | -25 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B90 |
| Temperature Grade | OTHER |
| Supply Current-Max | 0.13 |
| Number of Words | 4194304 |
| Number of Words Code | 4000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Standby Current-Max | 0.0005 |
| Access Time-Max | 7.5 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung K4M283233H-FG75 Datasheet
Download the complete datasheet for Samsung K4M283233H-FG75 to view detailed technical specifications.
No datasheet is available for this part.