128Mbit Mobile SDRAM chip, organized as 4Mx32, featuring a 32-bit data bus and a 14-bit address bus. Operates at a maximum clock rate of 133 MHz with 4 internal banks, each containing 1M words. Presented in a 90-pin FBGA package with a 0.8mm pin pitch, suitable for surface mounting. Offers a maximum access time of 6 ns and operates within a supply voltage range of 2.7V to 3.6V, with a typical voltage of 3V.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Samsung K4S283233F-HN75T00 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
90
PCB
90
Package Length (mm)
13
Package Width (mm)
8
Package Height (mm)
0.75
Seated Plane Height (mm)
1.1
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
128Mbit
Type
Mobile SDRAM
Organization
4Mx32
Data Bus Width
32bit
Maximum Clock Rate
133MHz
Number of Internal Banks
4
Number of Words per Bank
1M
Maximum Access Time
7|6ns
Density in Bits
134217728bit
Address Bus Width
14bit
Maximum Operating Current
85mA
Typical Operating Supply Voltage
3V
Max Operating Supply Voltage
3.6V
Min Operating Supply Voltage
2.7V
Min Operating Temperature
-25°C
Max Operating Temperature
85°C
Compliance
Cage Code
1542F
HTS Code
8542320002
Schedule B
8542320015
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Samsung K4S283233F-HN75T00 Datasheet
Download the complete datasheet for Samsung K4S283233F-HN75T00 to view detailed technical specifications.
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