128Mbit Mobile SDRAM chip, organized as 4Mx32, featuring a 32-bit data bus and a 14-bit address bus. Operates at a maximum clock rate of 133 MHz with 4 internal banks, each containing 1M words. Presented in a 90-pin FBGA package with a 0.8mm pin pitch, suitable for surface mounting. Offers a maximum access time of 6 ns and operates within a supply voltage range of 2.7V to 3.6V, with a typical voltage of 3V.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Samsung K4S283233F-HN75T00 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 90 |
| PCB | 90 |
| Package Length (mm) | 13 |
| Package Width (mm) | 8 |
| Package Height (mm) | 0.75 |
| Seated Plane Height (mm) | 1.1 |
| Pin Pitch (mm) | 0.8 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 128Mbit |
| Type | Mobile SDRAM |
| Organization | 4Mx32 |
| Data Bus Width | 32bit |
| Maximum Clock Rate | 133MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 1M |
| Maximum Access Time | 7|6ns |
| Density in Bits | 134217728bit |
| Address Bus Width | 14bit |
| Maximum Operating Current | 85mA |
| Typical Operating Supply Voltage | 3V |
| Max Operating Supply Voltage | 3.6V |
| Min Operating Supply Voltage | 2.7V |
| Min Operating Temperature | -25°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 1542F |
| HTS Code | 8542320002 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Samsung K4S283233F-HN75T00 Datasheet
Download the complete datasheet for Samsung K4S283233F-HN75T00 to view detailed technical specifications.
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