This 54-pin dual in-line synchronous DRAM from Samsung features a maximum operating temperature of 85 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It operates at a supply voltage of 3.3V with a maximum supply current of 0.08A. The memory IC type is synchronous DRAM with a maximum access time of 5.4ns and a maximum clock frequency of 133MHz. The device has a standby current of 0.002A and is available in a TSOP-54 package.
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Technical Specifications
Samsung K4S561632N-LI75 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 54 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-G54 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 3.3 |
| Supply Current-Max | 0.08 |
| Number of Words | 16777216 |
| Number of Words Code | 16000000 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Standby Current-Max | 0.002 |
| Access Time-Max | 5.4 |
| Clock Frequency-Max (fCLK) | 133 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K4S561632N-LI75 Datasheet
Download the complete datasheet for Samsung K4S561632N-LI75 to view detailed technical specifications.
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