Samsung
K4T1G084QE-HCF8
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Quick Jump:
Technical Specifications
Samsung K4T1G084QE-HCF8 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 60 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B60 |
| Width | 7.5 |
| Length | 9.5 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Current-Max | 0.185 |
| Number of Words | 134217728 |
| Number of Words Code | 128000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Access Time-Max | 0.35 |
| Clock Frequency-Max (fCLK) | 533 |
| I/O Type | COMMON |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Samsung K4T1G084QE-HCF8 Datasheet
Download the complete datasheet for Samsung K4T1G084QE-HCF8 to view detailed technical specifications.
No datasheet is available for this part.