DDR2 SDRAM memory chip, 512Mbit density, organized as 32Mx16 with a 16-bit data bus. Features a maximum clock rate of 667 MHz and a 1.8V operating supply voltage. Housed in an 84-pin FBGA package with a 0.8mm pin pitch, this surface-mount component offers 4 internal banks and 8M words per bank. Operates within a temperature range of -40°C to 95°C.
PackageFBGA
MountingSurface Mount
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Technical Specifications
Samsung K4T51163QI-HIE6 technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
84
PCB
84
Package Length (mm)
12.5
Package Width (mm)
7.5
Seated Plane Height (mm)
1.1
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
512Mbit
Type
DDR2 SDRAM
Organization
32Mx16
Data Bus Width
16bit
Maximum Clock Rate
667MHz
Number of Internal Banks
4
Number of Words per Bank
8M
Maximum Access Time
0.45ns
Density in Bits
536870912bit
Address Bus Width
15bit
Maximum Operating Current
115mA
Typical Operating Supply Voltage
1.8V
Max Operating Supply Voltage
1.9V
Min Operating Supply Voltage
1.7V
Min Operating Temperature
-40°C
Max Operating Temperature
95°C
Compliance
Cage Code
1542F
EU RoHS
Yes
HTS Code
8542320028
Schedule B
8542320015
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Samsung K4T51163QI-HIE6 Datasheet
Download the complete datasheet for Samsung K4T51163QI-HIE6 to view detailed technical specifications.
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