DDR2 SDRAM memory chip, 512Mbit density, organized as 32Mx16 with a 16-bit data bus width. Features a maximum clock rate of 667 MHz and operates at a typical 1.8V supply voltage. Packaged in an 84-pin FBGA (Fine Pitch Ball Grid Array) with a 0.8mm pin pitch, designed for surface mounting. Offers 4 internal banks and a maximum access time of 0.45 ns, with an operating temperature range of -40°C to 95°C.
Samsung K4T51163QI-HPE6 technical specifications.
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