The K6F2016U4E-EF70 is a 48-pin VFBGA industrial-grade SRAM IC from Samsung. It operates within a temperature range of -40°C to 85°C and has a maximum supply voltage of 3.3V. The device features a maximum access time of 70ns and a maximum standby current of 2nA. It is designed for parallel operation and has a common I/O type.
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Technical Specifications
Samsung K6F2016U4E-EF70 technical specifications.
General
| Max Operating Temperature | 85 |
| Number of Terminals | 48 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B48 |
| Width | 6 |
| Length | 7 |
| Pin Count | 48 |
| Number of Functions | 1 |
| Temperature Grade | INDUSTRIAL |
| Supply Voltage-Nom (Vsup) | 3 |
| Supply Voltage-Max (Vsup) | 3.3 |
| Supply Voltage-Min (Vsup) | 2.7 |
| Supply Current-Max | 0.017 |
| Number of Words | 131072 |
| Number of Words Code | 128000 |
| Memory IC Type | STANDARD SRAM |
| Parallel/Serial | PARALLEL |
| Standby Current-Max | 0.000002 |
| Access Time-Max | 70 |
| I/O Type | COMMON |
Compliance
| RoHS | No |
| Eccn Code | 3A991.B.2.A |
| HTS Code | 8542.32.00.41 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Samsung K6F2016U4E-EF70 Datasheet
Download the complete datasheet for Samsung K6F2016U4E-EF70 to view detailed technical specifications.
No datasheet is available for this part.