Async SRAM chip, 4M-bit density, organized as 256K words by 16 bits. Features a 70ns maximum access time and operates from a 3V supply voltage (2.7V to 3.3V range). Housed in a 48-pin TBGA package with a 0.75mm pin pitch, measuring 7mm x 6mm x 0.58mm. Surface mountable with a maximum operating current of 22mA and an operating temperature range of -40°C to 85°C.
PackageTBGA
MountingSurface Mount
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Technical Specifications
Samsung K6F4016U6E-EF70T technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TBGA |
| Package Description | Thin Profile Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 7 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.58 |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.75 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 4Mbit |
| Address Bus Width | 18bit |
| Maximum Access Time | 70ns |
| Timing Type | Asynchronous |
| Density in Bits | 4194304bit |
| Maximum Operating Current | 22mA |
| Typical Operating Supply Voltage | 3V |
| Number of Bits per Word | 16bit |
| Number of Ports | 1 |
| Number of Words | 256K |
| Min Operating Supply Voltage | 2.7V |
| Max Operating Supply Voltage | 3.3V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 1542F |
| EU RoHS | No |
| HTS Code | 8542320041 |
| Schedule B | 8542320040 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Samsung K6F4016U6E-EF70T Datasheet
Download the complete datasheet for Samsung K6F4016U6E-EF70T to view detailed technical specifications.
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