4M-bit asynchronous SRAM chip, organized as 256K words by 16 bits, featuring a 70ns maximum access time. This surface-mount component operates with a typical supply voltage of 3V, ranging from 2.7V to 3.3V. Encased in a 48-pin Thin Profile Ball Grid Array (TBGA) package measuring 7mm x 6mm x 0.58mm with a 0.75mm pin pitch, it supports a 4194304-bit density. Operating temperature range is -40°C to 85°C.
PackageTBGA
MountingSurface Mount
Quick Jump:
Technical Specifications
Samsung K6F4016U6E-EF70T00 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | TBGA |
| Package Description | Thin Profile Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 48 |
| PCB | 48 |
| Package Length (mm) | 7 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.58 |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.75 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 4Mbit |
| Address Bus Width | 18bit |
| Maximum Access Time | 70ns |
| Timing Type | Asynchronous |
| Data Rate Architecture | SDR |
| Density in Bits | 4194304bit |
| Maximum Operating Current | 22mA |
| Typical Operating Supply Voltage | 3V |
| Number of Bits per Word | 16bit |
| Number of Ports | 1 |
| Number of Words | 256K |
| Min Operating Supply Voltage | 2.7V |
| Max Operating Supply Voltage | 3.3V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
Compliance
| Cage Code | 1542F |
| EU RoHS | No |
| HTS Code | 8542320041 |
| Schedule B | 8542320040 |
| ECCN | 3A991.b.2.a |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Samsung K6F4016U6E-EF70T00 Datasheet
Download the complete datasheet for Samsung K6F4016U6E-EF70T00 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.