The K7I641884M-FC30 is a commercial-grade DDR SRAM IC with a supply voltage range of 1.7 to 1.9V and a nominal voltage of 1.8V. It features an access time of 0.45ns and a clock frequency of up to 300MHz. The device has 165 pins and is packaged in a BGA package with dimensions of 11x15mm. It is designed for use in parallel mode and has a memory capacity of 4194304 words, with 4000000 words of code memory.
Samsung K7I641884M-FC30 technical specifications.
| Max Operating Temperature | 70 |
| Number of Terminals | 165 |
| Min Operating Temperature | 0 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B165 |
| Width | 15 |
| Length | 17 |
| Pin Count | 165 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.9 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Number of Words | 4194304 |
| Number of Words Code | 4000000 |
| Memory IC Type | DDR SRAM |
| Parallel/Serial | PARALLEL |
| Access Time-Max | 0.45 |
| Clock Frequency-Max (fCLK) | 300 |
| I/O Type | COMMON |
| RoHS | No |
| Eccn Code | 3A991.B.2.A |
| HTS Code | 8542.32.00.41 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Samsung K7I641884M-FC30 to view detailed technical specifications.
No datasheet is available for this part.