Power MOSFET, N/P-channel enhancement mode, featuring 60V drain-source voltage and 6A continuous drain current. This component offers a 220mOhm drain-source resistance at 4V for N-channel and 10V for P-channel. It is housed in a 12-pin Single In Line Package (SIP) with a tab, designed for through-hole mounting. The device operates across a temperature range of -40°C to 150°C and has a maximum power dissipation of 5000mW.
PackageSIP
MountingThrough Hole
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Technical Specifications
Sanken Electric SLA5060 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
SIP
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
12
PCB
12
Tab
Tab
Package Length (mm)
31.5(Max)
Package Width (mm)
4.8
Package Height (mm)
16
Seated Plane Height (mm)
18.7
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Hex
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N|P
Number of Elements per Chip
6
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
6A
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
220@4V@N Channel|220@10V@P ChannelmOhm
Typical Input Capacitance @ Vds
320@10V@ N Channel|790@10V@P ChannelpF
Maximum Power Dissipation
5000mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDH93
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Sanken Electric SLA5060 Datasheet
Download the complete datasheet for Sanken Electric SLA5060 to view detailed technical specifications.
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