RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC, FM-6
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC (A): 0.15A; HFE Min: 120; HFE Max: 560; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.4V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 180+ MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T-41, 4 PIN
Power Bipolar Transistor, 15A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 120V; IC (A): 0.8A; HFE Min: 80; HFE Max: 240; VCE (V): 5V; IC (mA): 100mA; VCE(SAT) (V): 1V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 120+ MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89