Galaxy Microelectronics is a leading manufacturer of high-performance computing solutions, specializing in custom-built systems, industrial PCs, and embedded systems. They offer a wide range of products designed for demanding applications across various industries.
Bridge Rectifier Diode, 25A, 600V V(RRM),
Surface Mount TVS Diode; Direction: Single; PPK Max (W): 600W; Condition: 10×1000us; VRWM Max (V): 136V; VBR Min (V): 152V; VBR Max (V): 168V; IR Max (uA): 5uA; VC Max (V): 219V; Package: DO-15
Schottky Barrier Rectifier; Configuration: Single; VRRM Max (V): 30V; IAV Max (A): 1A; VFM Max (V): 0.55V; @ IF (A): 1A; IFSM Max (A): 25A; IR Max (uA): 1000uA; @VR (V): 30V; Package: A-405
Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-15, PLASTIC PACKAGE-2
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon,
Zener Diode; Configuration: Single; Tolerance: 0.02; VZ Typ (V): 5.6; P Max (mW): 200; Package: DFN1006-2; Pin: Z1
Trans Voltage Suppressor Diode, 23.1V V(RWM), Bidirectional,
Rectifier Diode,
Ultra Fast Recovery Rectifier, VRRM MAX (V): 150V; IAV MAX (A): 1A; VFM MAX (V): 0.95V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 5uA; @VR (V): 150V; TRR MAX (NS): 50ns; Package: DO-41
Bidirectional TVS Diode, 400W, 28V, SMA
NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323
Rectifier Diode, 1 Element, 1A, 50V V(RRM),
Schottky Rectifier Diode, 3A, 40V
Bridge Rectifier Diode, 1A, 100V V(RRM),
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC (A): 0.2A; HFE Min: 150; HFE Max: 800; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.3V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 180 MHz; PTM Max (W): 0.15W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23
Zener Diode; Configuration: Two Duals,Common Anode; VZ Typ (V): 36; P Max (mW): 350; Package: SOT-23; Pin: Z4
Surface Mount TVS Diode; Direction: Single; PPK Max (W): 600W; Condition: 10×1000us; VRWM Max (V): 10.2V; VBR Min (V): 11.4V; IR Max (uA): 5uA; VC Max (V): 16.7V; Package: DO-15
Super Fast Recovery Rectifier, VRRM MAX (V): 150V; IAV MAX (A): 2A; VFM MAX (V): 0.95V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 5uA; @VR (V): 150V; TRR MAX (NS): 35ns; Package: SMBF
Rectifier Diode, 1 Element, 3A, 400V V(RRM),
Ultra Fast Recovery Rectifier, VRRM MAX (V): 700V; IAV MAX (A): 1A; VFM MAX (V): 1.7V; @ IF (A): 1A; IFSM MAX (A): 30A; IR MAX (UA): 10uA; @VR (V): 700V; TRR MAX (NS): 75ns; Package: DO-41