Inductor RF Wirewound 47000uH 10% 79KHz 23Q-Factor 470Ohm DCR AXL T/R
Inductor RF Wirewound 1500uH 10% 250KHz 50Q-Factor 25Ohm DCR AXL T/R
Antenna Parabolic 41.9dBi Gain 13250MHz Cardboard/Crate
THYRISTOR DISC 3000V 1800A TBK
Silicon Controlled Rectifier, 3925A I(T)RMS, 2500000mA I(T), 1700V V(DRM), 1700V V(RRM), 1 Element, TBK, 3 PIN
THYRISTOR DISC 3800V 1650A TBK
Silicon Controlled Rectifier, 4240A I(T)RMS, 2300000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element
Silicon Controlled Rectifier, 2590A I(T)RMS, 1650000mA I(T), 4200V V(DRM), 4200V V(RRM), 1 Element
Silicon Controlled Rectifier, 1700000mA I(T), 1600V V(DRM)
Silicon Controlled Rectifier, 2500000mA I(T), 1800V V(DRM)
Duct Cover Polyvinyl Chloride Gray
Antenna Parabolic 45.4dBi Gain 13250MHz Cardboard/Crate
Silicon Controlled Rectifier, 2826A I(T)RMS, 1800000mA I(T), 3500V V(DRM), 3500V V(RRM), 1 Element, TBK, 3 PIN
Silicon Controlled Rectifier, 2590.5A I(T)RMS, 1650000mA I(T), 4300V V(DRM), 4300V V(RRM), 1 Element, TBK, 3 PIN
Silicon Controlled Rectifier, 4820A I(T)RMS, 2500000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, HERMETIC SEALED, TBK, 3 PIN
Silicon Controlled Rectifier, 2590A I(T)RMS, 1650000mA I(T), 4000V V(DRM), 4000V V(RRM), 1 Element
Silicon Controlled Rectifier, 4820A I(T)RMS, 2500000mA I(T), 1600V V(DRM), 1600V V(RRM), 1 Element, HERMETIC SEALED, TBK, 3 PIN
Silicon Controlled Rectifier, 2100000mA I(T), 5600V V(DRM)
Silicon Controlled Rectifier, 1700000mA I(T), 1700V V(DRM)
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