RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 4 PIN
FET, P Channel, ID 1.8 A
L-Band High Power GaAs FET
FET, P Channel, ID 15 A
High Voltage - High Power GaAs FET
FET, P Channel, ID 13 A
FET, P Channel, ID 32 A
FET, P Channel, ID 16 A
Trans FET 32V
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, IK, 2 PIN
FET Transistor, L,S-band High Power GaAs FET
Trans RF FET 32V
