Search Results for &quot; IRHM7450 &quot;

Trans MOSFET N-CH 100V 6.9A 3-Pin SMD-0.2

Volume Production

Continuous Drain Current (ID): 6.9A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNA57064

Trans MOSFET N-CH 60V 75A 3-Pin SMD-2

Volume Production

Continuous Drain Current (ID): 75A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ63234

Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 12.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRH9130SCV

Trans MOSFET P-CH 100V 11A 2-Pin TO-204AA

Not Recommended for New Design

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHY7130CM

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

TO-257AA, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRHNJ53034

Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHY7230CM

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

HERMETIC SEALED, CERAMIC PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRHLF780Z4

Trans MOSFET N-CH 60V 1.6A 3-Pin TO-205AF

Not Recommended for New Design

Continuous Drain Current (ID): 1.6A

Mount: Through Hole

Packaging: Bulk

Radiation Hardening: No

IRHNA67264

Power Field-Effect Transistor, 56A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

SMALL OUTLINE, R-CDSO-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: DUAL

IRHNA58Z60

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

CHIP CARRIER, R-CBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNA67160

Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNM597110

Trans MOSFET P-CH 100V 3.1A 3-Pin SMD-0.2

Volume Production

Continuous Drain Current (ID): 3.1A

Fall Time: 85ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRHN9150SCS

Trans MOSFET P-CH 100V 22A 3-Pin SMD-1

Not Recommended for New Design

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7430SE

Trans MOSFET N-CH 500V 4.4A 3-Pin SMD-0.5

Volume Production

Continuous Drain Current (ID): 4.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHE8110SCS

Trans MOSFET N-CH 100V 3.5A 18-Pin LCC

Not Recommended for New Design

Package/Case: LCC

Continuous Drain Current (ID): 3.5A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRHF8110SCV

Trans MOSFET N-CH 100V 3.5A 3-Pin TO-205AF

Not Recommended for New Design

Continuous Drain Current (ID): 3.5A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHY53130CM

Power Field-Effect Transistor, 18A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

TO-257AA, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: SINGLE

IRHY57Z30CM

Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

HERMETIC SEALED, CERAMIC PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRHY57034CM

Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

HERMETIC SEALED, CERAMIC PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

Search Results for "IRHM7450"

Filters

IRHNM57110

Trans MOSFET N-CH 100V 6.9A 3-Pin SMD-0.2

Volume Production

Continuous Drain Current (ID): 6.9A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ93130

Power Field-Effect Transistor, 11A I(D), 100V, 0.34ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Transferred

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNA57064

Trans MOSFET N-CH 60V 75A 3-Pin SMD-2

Volume Production

Continuous Drain Current (ID): 75A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ63234

Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5

Not Recommended for New Design

Continuous Drain Current (ID): 12.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRH9130SCV

Trans MOSFET P-CH 100V 11A 2-Pin TO-204AA

Not Recommended for New Design

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHY7130CM

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

TO-257AA, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRHNJ53034

Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: BOTTOM

IRHY7230CM

Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

HERMETIC SEALED, CERAMIC PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRHLF780Z4

Trans MOSFET N-CH 60V 1.6A 3-Pin TO-205AF

Not Recommended for New Design

Continuous Drain Current (ID): 1.6A

Mount: Through Hole

Packaging: Bulk

Radiation Hardening: No

IRHNA67264

Power Field-Effect Transistor, 56A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

SMALL OUTLINE, R-CDSO-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: DUAL

IRHNA58Z60

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

CHIP CARRIER, R-CBCC-N3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNA67160

Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

IRHNM597110

Trans MOSFET P-CH 100V 3.1A 3-Pin SMD-0.2

Volume Production

Continuous Drain Current (ID): 3.1A

Fall Time: 85ns

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRHN9150SCS

Trans MOSFET P-CH 100V 22A 3-Pin SMD-1

Not Recommended for New Design

Continuous Drain Current (ID): 22A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHNJ7430SE

Trans MOSFET N-CH 500V 4.4A 3-Pin SMD-0.5

Volume Production

Continuous Drain Current (ID): 4.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHE8110SCS

Trans MOSFET N-CH 100V 3.5A 18-Pin LCC

Not Recommended for New Design

Package/Case: LCC

Continuous Drain Current (ID): 3.5A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

IRHF8110SCV

Trans MOSFET N-CH 100V 3.5A 3-Pin TO-205AF

Not Recommended for New Design

Continuous Drain Current (ID): 3.5A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRHY53130CM

Power Field-Effect Transistor, 18A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

TO-257AA, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -55

Terminal Position: SINGLE

IRHY57Z30CM

Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

HERMETIC SEALED, CERAMIC PACKAGE-3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRHY57034CM

Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3