Variable Capacitance Diode, Very High Frequency to KA Band, 3.7pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CERAMIC PACKAGE-2
Variable Capacitance Diode, Very High Frequency to KA Band, 4.7pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CERAMIC PACKAGE-2
Variable Capacitance Diode, Very High Frequency to KA Band, 0.5pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CERAMIC PACKAGE-2
Mixer Diode, Very High Frequency, Silicon, SC-82, 4 PIN
Rectifier Diode, Schottky, 2 Element, 0.03A, Silicon, ROHS COMPLIANT, SSMINI4-F1, 4 PIN
Ultrasonic Sensor
Variable Capacitance Diode, Very High Frequency to KA Band, 1.2pF C(T), 22V, Gallium Arsenide, Hyperabrupt, CERAMIC PACKAGE-2
Rectifier Diode, 2 Element, 0.1A, Silicon, ROHS COMPLIANT, SSMINI4-F1, 4 PIN
Proximity Sensor Ultrasonic 600cm 2-Pin
Varactor,
RF Switch ICs .05-50GHz SP4T AlGaAs IL .7dB
Variable Capacitance Diode, 47pF C(T),
Mixer Diode, Millimeter Wave Band, Gallium Arsenide, CASE 1199, 3 PIN
Mixer Diode, Very High Frequency, Silicon, ROHS COMPLIANT, SSMINI4-F1, 4 PIN
SP5T, 50MHz Min, 26000MHz Max, 1.4dB Insertion Loss-Max, ROHS COMPLIANT PACKAGE-6
