Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Inductor Power Shielded Wirewound 22uH 20% 1KHz Ferrite 1.6A 0.099Ohm DCR T/R
Inductor Power Shielded Wirewound 6.8uH 20% 100KHz Ferrite 4.2A 0.025Ohm DCR T/R
Inductor Power Shielded Wirewound 1uH 20% 100KHz Ferrite 8.71A 0.01Ohm DCR T/R

Inductor Power Shielded Wirewound 47uH 20% 1KHz Ferrite 1.4A 0.15Ohm DCR T/R

Inductor Power Shielded Wirewound 33000uH 20% 1KHz Ferrite 0.05A 146Ohm DCR T/R

Inductor Power Shielded Wirewound 220uH 20% 1KHz Ferrite 0.62A 0.76Ohm DCR T/R

Inductor Power Shielded Wirewound 39000uH 20% 1KHz Ferrite 0.047A 150Ohm DCR T/R

Inductor Power Shielded Wirewound 390uH 20% 1KHz Ferrite 0.47A 1.22Ohm DCR T/R

Inductor Power Shielded Wirewound 15000uH 20% 1KHz Ferrite 0.074A 50.8Ohm DCR T/R

Inductor Power Shielded Wirewound 27000uH 20% 1KHz Ferrite 0.06A 112.4Ohm DCR T/R

Inductor Power Shielded Wirewound 18uH 20% 1KHz Ferrite 2.15A 0.073Ohm DCR T/R

Inductor Power Shielded Wirewound 3.9uH 20% 100KHz Ferrite 5A 0.019Ohm DCR T/R